POLOVODIČE / tranzistory
100V 10A ß>750 Dar.NPN TO220 70W/Tc25°C ECB
-100V 10A ß>750 Dar.PNP TO220 70W/Tc25°C ECB
-100V 8A ß>750 Dar.PNP TO220 -65+150 60W/Tc25°C
30V 0.0065A/25°C TO92 350mW/Ta25°C rozsah
30V 0.0065A/25°C TO92 350mW/Ta25°C rozsah
300V 100mA 90MHz NPN 5W/Ta25°C rozsah
300V 50mA ß>50 60MHz NPN TO92 830mW/Ta25°C
-300V 50mA ß>50 60MHz PNP TO92 830mW/Ta25°C ECB
300V 100mA ß>26 90MHz NPN TO126 6W/Ta90°C ECB
-300V 50mA ß>50 60MHz PNP TO126 1.8W/Ta114°C
-300V 50mA ß>50 60MHz PNP SOT89 -85+150°C
250V 50mA ß>25 250MHz NPN SOT23 250mW/Ta25°C
-30V 25mA ß>25 250MHz PNP SOT23 250mW/Ta25°C
FET N dual gate UHF/FM TO50 rozsah pracovních
12V 30mA N-FET dual gate SOT143 200mW/Ta50°C
12V 30mA N-FET dual gate SOT143 200mW/Ta50°C
20V 20mA ß70-140 175mW >6GHz NPN rozsah
±25V 10mA 250mW N-FET rozsah pracovních
12V 35mA 300mW -65°C to +150°C NPN rozsah
200V 0.25A 14 Ohm/10V/200mA NMOS TO92 350mW
200V 0.25A 6,4Ohm/10V/200m 0,35W Ugs=10V NMOS
200V 0.23A/25°C 8000mO/1.8V pás Ugs=1.8V/20V