POLOVODIČE / FET N-kanál
60V 115mA/25°C 75mA/75°C 7500mO *S
60V 300mA/25°C 190mA/100°C *S toff
60V 115mA/25°C 75mA/75°C 7500mO *S
60V 300mA/25°C 190mA/100°C *S toff
60V 115mA/25°C 75mA/75°C 7500mO *S
60V 340mA/25°C 215mA/100°C *S toff
900V 59A/25°C 44A/80°C 60mO rozsah
30V 0.0065A/25°C TO92 350mW/Ta25°C rozsah
30V 0.0065A/25°C TO92 350mW/Ta25°C rozsah
12V 30mA N-FET dual gate SOT143 200mW/Ta50°C
12V 30mA N-FET dual gate SOT143 200mW/Ta50°C
±25V 10mA 250mW N-FET rozsah pracovních
200V 0.25A 14 Ohm/10V/200mA NMOS TO92 350mW
200V 0.25A 6,4Ohm/10V/200m 0,35W Ugs=10V NMOS
200V 0.23A/25°C 8000mO/1.8V pás Ugs=1.8V/20V
SOT23 FET N 50V 0.1A 15 Ohm rozsah pracovních
250V 310mA/25°C 1250mA/10ms 5000mO 1W/Ta25°
200V 660mA/25°C 530mA/70°C 3500mO rozsah
60V 1.8A/25°C 1.44A/70°C 300mO rozsah
TMOS 100V 6O/100mA 20/40ns 0,3W rozsah
TMOS 100V 6O/100mA 20/40ns 0,3W rozsah
TMOS 100V 6O/100mA 20/40ns 0,3W rozsah